ELECTRON-PARAMAGNETIC RESONANCE STUDY OF POROUS SILICON

被引：19
|
作者：
BHAT, SV
JAYARAM, K
MUTHU, DVS
SOOD, AK
机构：
[1] Department of Physics, Indian Institute of Science
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 17期
关键词：
D O I：
10.1063/1.107107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electron paramagnetic resonance studies under ambient conditions of boron-doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.
引用
收藏
页码：2116 / 2117
页数：2
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