GAMMA-RAY DIFFRACTION STUDY OF SURFACE REGIONS IN SI SINGLE-CRYSTALS AND SUBSTRATES OF CAF2/SI MBE HETEROSTRUCTURES AND (TI-NI)/SI MONOLAYER AND BILAYER SYSTEMS

被引：0
|
作者：
KURBAKOV, A
SOKOLOV, A
机构：
[1] Laboratory of Materials Science, St. Petersburg Nuclear Physics Institute
来源：
PHYSICA B | 1994年 / 198卷 / 1-3期
关键词：
D O I：
10.1016/0921-4526(94)90143-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
For the first time gamma-ray diffractometry investigations of narrow near-surface regions of samples have been carried out. The original technique has been developed and successfully applied for the separation of the micro-defect and macro-distortion influences upon gamma-radiation diffraction processes in real imperfect crystals. The results indicate that the gamma-ray diffraction is sensitive to the influence of even thin layers on a thick substrate.
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页码：133 / 135
页数：3
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