ELECTRON INTERACTIONS IN THE 2-DIMENSIONAL ELECTRON-GAS BASE OF A VERTICAL HOT-ELECTRON TRANSISTOR

被引：12

作者：

MATTHEWS, P ^{[1
]}

KELLY, MJ ^{[1
]}

LAW, VJ ^{[1
]}

HASKO, DG ^{[1
]}

PEPPER, M ^{[1
]}

STOBBS, WM ^{[1
]}

AHMED, H ^{[1
]}

PEACOCK, DC ^{[1
]}

FROST, JEF ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] DEPT MAT SCI & MET,CAMBRIDGE,ENGLAND

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.42.11415

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present results on the interaction of hot and cold electrons in a large-area two-dimensional electron-gas-base hot-electron transistor. Four-terminal magnetoresistance measurements of the cold electrons in the two-dimensional electron-gas (2DEG) base, as a function of forward-emitter bias, VEB, show significant deviations from the zero-bias condition. We identify two distinct regimes: (i) an enhanced interface scattering as the 2DEG is forced against the collector-barrier heterojunction for low biases before emitter-current injection and (ii) an electron-heating effect in the 2DEG once current injection occurs. We invoke a simple heat-exchange argument to analyze the relaxation of the injected hot carriers. © 1990 The American Physical Society.

引用

页码：11415 / 11418

页数：4

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