共 50 条
- [1] MODEL FOR THE ON STATE OF AMORPHOUS-CHALCOGENIDE THRESHOLD SWITCHESJOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 925 - 932PETERSEN, KEADLER, D
- [2] PROPERTIES OF FILAMENTS IN AMORPHOUS-CHALCOGENIDE SEMICONDUCTING THRESHOLD SWITCHESJOURNAL OF NON-CRYSTALLINE SOLIDS, 1974, 15 (02) : 310 - 328ORMONDROYD, RFALLISON, JTHOMPSON, MJ
- [3] EFFECT OF COMPOSITION AND FORMING PARAMETERS ON CONDUCTANCE OF AMORPHOUS-CHALCOGENIDE THRESHOLD SWITCHESJOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 18 (03) : 375 - 393ORMONDROYD, RFTHOMPSON, MJALLISON, J
- [4] MECHANISM OF FORMATION OF A MEMORY IN AMORPHOUS-CHALCOGENIDE SWITCHESSOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1023 - 1025MIKHAILOVSKII, SSVINOGRADOV, MS
- [5] AN ELECTROTHERMAL MODEL FOR THRESHOLD SWITCHING IN THIN AMORPHOUS-CHALCOGENIDE FILMSSOLID-STATE ELECTRONICS, 1981, 24 (03) : 233 - 248SHAW, MPSUBHANI, KF
- [6] CARRIER DECAY PROPERTIES OF ON-STATE OF AN AMORPHOUS-CHALCOGENIDE THRESHOLD SWITCHING SEMICONDUCTORAMERICAN CERAMIC SOCIETY BULLETIN, 1974, 53 (04): : 351 - 351VEZZOLI, GCDOREMUS, LWWALSH, PJ
- [7] CHARACTERIZATION OF LIGHT-EMISSION FROM AMORPHOUS-CHALCOGENIDE SWITCHESAPPLIED PHYSICS LETTERS, 1979, 34 (11) : 733 - 734WALSH, PJPOOLADDEJ, DTHOMPSON, MJALLISON, J
- [8] EFFECT OF THE TE/SI RATIO ON THE ELECTRICAL CHARACTERISTICS OF THE AMORPHOUS-CHALCOGENIDE SWITCHESJOURNAL OF MATERIALS SCIENCE, 1989, 24 (07) : 2444 - 2448ELFOULY, MHMORSY, AMAMMAR, AHMAGED, AFAMER, HH
- [9] THRESHOLD-SWITCHING-VOLTAGE STABILITY IN AMORPHOUS-CHALCOGENIDE SEMICONDUCTORSINORGANIC MATERIALS, 1982, 18 (12) : 1725 - 1728POPOV, AISHEMETOVA, VK
- [10] ON-STATE IN CHALCOGENIDE THRESHOLD SWITCHESAPPLIED PHYSICS LETTERS, 1972, 21 (11) : 544 - &LEE, SH