DOPING OF HIGHLY TETRAHEDRAL AMORPHOUS-CARBON

被引：0
|
作者：
AMARATUNGA, GAJ
VEERASAMY, VS
DAVIS, CA
MILNE, WI
MCKENZIE, DR
YUAN, J
WEILER, M
机构：
[1] UNIV SYDNEY, SCH PHYS, SYDNEY, NSW 2006, AUSTRALIA
[2] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE CB3 0HE, CAMBS, ENGLAND
[3] UNIV KAISERSLAUTERN, DEPT PHYS, W-6750 KAISERSLAUTERN, GERMANY
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 166卷
关键词：
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The doping of amorphous carbon films with over 80% sp(3) bonding is examined. It is shown that n-type doping with P and N is possible. p-type doping with B has been unsuccessful. The electronic properties of this form of amorphous carbon which has an optical band-gap of 2eV is taken as being governed largely by the pi and pi* states which arise due to the much smaller fraction of sp(2) bonded C. With low levels of N doping there is evidence for compensation of p-type defects in the undoped material. It is thought that dopants which have deep levels in diamond appear as shallow dopants in tetrahedral amorphous carbon due to the presence of the pi states.
引用
收藏
页码：1119 / 1122
页数：4
相关论文
共 50 条
  • [1] NITROGEN DOPING OF HIGHLY TETRAHEDRAL AMORPHOUS-CARBON
    VEERASAMY, VS
    YUAN, J
    AMARATUNGA, GAJ
    MILNE, WI
    GILKES, KWR
    WEILER, M
    BROWN, LM
    [J]. PHYSICAL REVIEW B, 1993, 48 (24): : 17954 - 17959
  • [2] NITROGEN DOPING OF TETRAHEDRAL AMORPHOUS-CARBON
    ROBERTSON, J
    DAVIS, CA
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 441 - 444
  • [3] SUBSTITUTIONAL NITROGEN DOPING OF TETRAHEDRAL AMORPHOUS-CARBON
    DAVIS, CA
    MCKENZIE, DR
    YIN, Y
    KRAVTCHINSKAIA, E
    AMARATUNGA, GAJ
    VERASAMY, VS
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1994, 69 (06): : 1133 - 1140
  • [4] GAP STATES, DOPING AND BONDING IN TETRAHEDRAL AMORPHOUS-CARBON
    AMARATUNGA, GAJ
    ROBERTSON, J
    VEERASAMY, VS
    MILNE, WI
    MCKENZIE, DR
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (5-6) : 637 - 640
  • [5] N-TYPE DOPING OF HIGHLY TETRAHEDRAL DIAMOND-LIKE AMORPHOUS-CARBON
    VEERASAMY, VS
    AMARATUNGA, GAJ
    DAVIS, CA
    TIMBS, AE
    MILNE, WI
    MCKENZIE, DR
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (13) : L169 - L174
  • [6] ELECTRONIC DENSITY-OF-STATES IN HIGHLY TETRAHEDRAL AMORPHOUS-CARBON
    VEERASAMY, VS
    AMARATUNGA, GAJ
    DAVIS, CA
    MILNE, WI
    HEWITT, P
    [J]. SOLID-STATE ELECTRONICS, 1994, 37 (02) : 319 - 326
  • [7] PHOTOCONDUCTIVITY IN HIGHLY TETRAHEDRAL DIAMOND-LIKE AMORPHOUS-CARBON
    AMARATUNGA, GAJ
    VEERASAMY, VS
    MILNE, WI
    DAVIS, CA
    SILVA, SRP
    MACKENZIE, HS
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (03) : 370 - 372
  • [8] TETRAHEDRAL AMORPHOUS-CARBON PROPERTIES AND APPLICATIONS
    MCKENZIE, DR
    YIN, Y
    MARKS, NA
    DAVIS, CA
    KRAVTCHINSKAIA, E
    PAILTHORPE, BA
    AMARATUNGA, GAJ
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 166 : 1101 - 1106
  • [9] MAGNETIC AND SPIN PROPERTIES OF TETRAHEDRAL AMORPHOUS-CARBON
    GOLZAN, MM
    MCKENZIE, DR
    MILLER, DJ
    COLLOCOTT, SJ
    AMARATUNGA, GAJ
    [J]. DIAMOND AND RELATED MATERIALS, 1995, 4 (07) : 912 - 916
  • [10] NEUTRON-SCATTERING STUDIES OF THE STRUCTURE OF A HIGHLY TETRAHEDRAL FORM OF AMORPHOUS-CARBON
    GASKELL, PH
    SAEED, A
    CHIEUX, P
    MCKENZIE, DR
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 150 (1-3) : 126 - 131
12345