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- [5] ELECTRIC-FIELD DEPENDENCE OF THE HALL-EFFECT IN POLAR SEMICONDUCTORS - STREAMING TO ACCUMULATION TRANSITION PHYSICAL REVIEW B, 1986, 33 (02): : 1213 - 1221
- [7] ELECTRIC-FIELD DEPENDENT MOBILITY EDGE AND THEORY OF THE BREAKDOWN OF THE INTEGER QUANTUM HALL-EFFECT PHYSICA B, 1993, 190 (04): : 366 - 376
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- [9] TRANSPORT-THEORY OF A LONGITUDINAL HALL-EFFECT IN A HIGH-FREQUENCY ELECTRIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1080 - 1081
- [10] HIGH ELECTRIC-FIELD HALL-EFFECT MEASUREMENTS ON N-TYPE INSB AT 77K APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (02): : 107 - 120