QUESTIONS ABOUT THE SI(111)-(7X7) RECONSTRUCTED SURFACE

被引：17
|
作者：
OHDOMARI, I
机构：
[1] School of Science and Engineering, Waseda University, Tokyo
来源：
SURFACE SCIENCE | 1990年 / 227卷 / 03期
关键词：
D O I：
10.1016/S0039-6028(05)80002-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Experimental difficulties to keep the Si(111) surface clean below 500°C, the unnatural stability of the (7 × 7) structure which is maintained even after deposition of amorphous Si (a-Si), and the irreversible transformation from the as-cleaved (2 × 1) structure into the (7 × 7) structure, oblige us to assume a modified DAS model stabilized with oxygen, in which less than one oxygen atom per adatom is introduced in the most strained backbonds of the adatoms. Oxygen eliminates two of the three adjacent four-membered rings below the adatoms and replaces the Si-Si bond with much the stronger Si-O bond and finally causes drastic decrease in the total energy. © 1990 Elsevier Science Publishers B.V. (North-Holland).
引用
收藏
页码：L125 / L129
页数：5
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