SURFACE PHOTOVOLTAGE SPECTROSCOPY OF GAP STATES AT GAAS AND INP METAL INTERFACES

被引：11
|
作者：
BURSTEIN, L
BREGMAN, J
SHAPIRA, Y
机构：
[1] Faculty of Engineering, Tel-Aviv University
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 23期
关键词：
D O I：
10.1063/1.103853
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface photovoltage spectroscopy has been used in order to investigate surface states at Al/n-GaAs (110), Au/n-GaAs (110) and Al/p-InP (110), Au/p-InP (110),(100) interfaces. Our results show formation of metal-induced surface states, which can be correlated with Fermi level pinning positions. The observed energy positions are found to be in good agreement with electrically measured Schottky barrier heights. The results obtained for these metals and the different surface types are discussed and compared to published data.
引用
收藏
页码：2466 / 2468
页数：3
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