CARRIER INJECTION INTO HEAVILY DOPED REGIONS OF A SILICON CARBIDE DIODE

被引：0
|
作者：
RYZHIKOV, IV
PAVLICHE.VI
KMITA, TG
LEYDERMA.AY
KARAGEOR.PM
机构：
来源：
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR | 1967年 / 12卷 / 05期
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暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：785 / +
页数：1
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