IMPURITY AND TEMPERATURE-DEPENDENCE OF SATURATED DRIFT VELOCITY IN SILICON

被引：0

作者：

DAGA, OP

KHOKLE, WS

GHULE, HM

机构：

[1] CENT ELECTR ENGN RES INST, PILANI, RESJASTHAN, INDIA

[2] BIRLA INST TECHNOL & SCI, PILANI, RASJASTHAN, INDIA

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1974年 / 61卷 / 01期

关键词：

D O I：

10.1002/pssb.2220610137

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：K9 / K11

页数：3

共 50 条

[1] TEMPERATURE-DEPENDENCE OF ELECTRON DRIFT VELOCITY IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) : 2433 - 2434
[2] TEMPERATURE-DEPENDENCE OF THE BEHAVIOR OF SILICON DRIFT DETECTORS
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SUMNER, TJ
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[3] TEMPERATURE-DEPENDENCE OF HOLE SATURATION VELOCITY IN SILICON
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[J]. APPLIED PHYSICS, 1974, 3 (05): : 431 - 432
[4] TEMPERATURE-DEPENDENCE OF THE DRIFT MOBILITY IN SILICON IRRADIATED WITH FAST ELECTRONS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1427 - 1428
[5] TEMPERATURE-DEPENDENCE OF CARRIER IONIZATION RATES AND SATURATED VELOCITIES IN SILICON
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) : 858 - 858
[6] TEMPERATURE-DEPENDENCE OF CARRIER IONIZATION RATES AND SATURATED VELOCITIES IN SILICON
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (03) : 527 - 547
[7] INVESTIGATION OF THE TEMPERATURE-DEPENDENCE OF THE VELOCITY OF SOUND AND COMPRESSIBILITY OF MOLTEN SILICON
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[8] TEMPERATURE-DEPENDENCE OF DRIFT VELOCITY OF CARBON IN ALPHA-IRON DURING ELECTROMIGRATION
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[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4819 - 4820
[9] TEMPERATURE-DEPENDENCE OF SATURATED AMINE FLUORESCENCE
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[10] TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-RESISTANCE OF A SATURATED SOLUTION OF SILICON IN A TIN MELT
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