NONLINEAR-INTERACTION OF ULTRA-SHORT LIGHT-PULSES WITH THIN SEMICONDUCTOR FILM UNDER 2-PHOTON EXITATION OF BIEXITONS

被引：0
|
作者：
KHADZHI, PI
GAIVAN, SL
机构：
来源：
KVANTOVAYA ELEKTRONIKA | 1995年 / 22卷 / 09期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Analitical solutions describing interaction of ultra-short light pulses with thin semiconductor film under two-photon exitation of biexitons from the groumd state of the crystall. A few effects of nonlinear transmission of ultra-short light pulses by thin film are predicted: the discrimination on intensity, the compression and the envelope transformation of indent pulses, as well as possibility of existence of <<super-radiance>> amplification of propagating Short pulse in previously excited crystall.
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页码：929 / 932
页数：4
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