REDUCTION OF RECOMBINATION CENTERS IN C-DOPED P+-GAAS/N-ALGAAS HETEROJUNCTIONS BY POSTGROWTH ANNEALING

被引：6
|
作者：
WATANABE, K
YAMAZAKI, H
YAMADA, K
机构：
[1] NTT LSI Laboratories, Atsugi-shi Kanagawa 243-01, 3-1, Morinosato Wakamiya
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期
关键词：
D O I：
10.1063/1.104482
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of post-growth annealing at 500, 600, and 700-degrees-C on the electrical characteristics of C-doped p + -GaAs/n-AlGaAs junction diodes fabricated with metalorganic chemical vapor deposition layers has been investigated. Recombination current is reduced by post-growth annealing at 600 and 700-degrees-C, but not at 500-degrees-C. The current reduction is primarily attributed to the dramatic reduction of 0.55 eV deep levels, which may be oxygen related complex levels. Under present annealing conditions, no degradation of carrier profiles near the p + -n junction is detected. Thus, post-growth annealing at temperatures of 600-degrees-C or higher is a promising method for reducing recombination centers in the C-doped p + -GaAs/n-AlGaAs junction.
引用
收藏
页码：934 / 936
页数：3
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