EPITAXIAL-GROWTH OF ULTRATHIN AL2O3 FILMS ON TA(110)

被引：110

作者：

CHEN, PJ ^{[1
]}

GOODMAN, DW ^{[1
]}

机构：

[1] TEXAS A&M UNIV,DEPT CHEM,COLLEGE STN,TX 77843

来源：

SURFACE SCIENCE | 1994年 / 312卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)90719-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Heteroepitaxial growth of ultrathin (5-40 angstrom) aluminum oxide films was successfully carried out on a Ta(110) substrate between 700 and 900 K by means of vacuum reactive deposition. Low-energy electron diffraction (LEED) indicated the formation of a long-range ordered epitaxial Al2O3 film with a slightly distorted (beta = 117.9) hexagonal lattice corresponding to close-packing of oxygen (O2-) anions. The epitaxial overlayer was found to exhibit a Kurdjumov-Sachs (KS) type orientational relationship with respect to the Ta(110) substrate with approximately 4.2-degrees rotational mismatch.

引用

页码：L767 / L773

页数：7

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