ELECTRICAL AND OPTICAL-PROPERTIES OF DISLOCATIONS IN GAAS

The existence of two dislocation bands B1 and B2 associated with alpha and beta dislocations is deduced from the analysis of galvanomagnetic and optical measurements on plastically deformed samples. Photoplastic effects have been experimentally studied in n-and p-type materials. Results show that both the alpha and beta glide directions are photoactivated in n type but that only beta glide is activated in p type. These different behaviours are analysed with the help of the dislocation bands and their corresponding configuration coordinate diagram. Degradation phenomena are then explained in terms of such photoplastic properties.