BREAKDOWN OF QUANTUM HALL-EFFECT IN SILICON METAL DIELECTRIC SEMICONDUCTOR STRUCTURES

被引：0

作者：

DUBROVSKII, YV ^{[1
]}

NUNUPAROV, MS ^{[1
]}

REZNIKOV, MI ^{[1
]}

机构：

[1] ACAD SCI USSR,INST SOLID STATE PHYS,MOSCOW V-71,USSR

来源：

ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 1988年 / 94卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：356 / 362

页数：7

共 50 条

[1] QUANTUM HALL-EFFECT IN SILICON METAL-INSULATOR SEMICONDUCTOR STRUCTURES
GERASIMOV, NP
KOZYREV, SV
OVSYUK, VN
POTAPOV, SV
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CHEREMNYKH, PA
SHMARTSEV, YV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (02): : 228 - 229
[2] COULOMB GAPS IN POWER SPECTRA DURING THE FRACTIONAL QUANTUM HALL-EFFECT IN SILICON MDS (METAL-DIELECTRIC-SEMICONDUCTOR) STRUCTURES
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TIMOFEEV, VB
[J]. IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1986, 50 (02): : 228 - 231
[3] BREAKDOWN OF THE QUANTUM HALL-EFFECT
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (07): : L155 - L159
[4] COMPLEX QUANTUM SCATTERING AND THE BREAKDOWN OF THE QUANTUM HALL-EFFECT
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[J]. PHYSICAL REVIEW LETTERS, 1990, 65 (06) : 779 - 782
[5] POSSIBLE MECHANISM FOR THE BREAKDOWN OF THE QUANTUM HALL-EFFECT
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[J]. SOLID STATE COMMUNICATIONS, 1991, 78 (09) : 817 - 821
[6] OBSERVATION AND AN EXPLANATION OF BREAKDOWN OF THE QUANTUM HALL-EFFECT
CAGE, ME
YU, DY
REEDTZ, GM
[J]. JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 1990, 95 (01) : 93 - 99
[7] SELECTIVE BACKSCATTERING AND THE BREAKDOWN OF THE QUANTUM HALL-EFFECT
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BRUGMANS, MJP
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[J]. SURFACE SCIENCE, 1992, 263 (1-3) : 288 - 292
[8] INTRINSIC SEQUENCE IN THE BREAKDOWN OF THE QUANTUM HALL-EFFECT
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[J]. SURFACE SCIENCE, 1990, 229 (1-3) : 57 - 59
[9] THEORY OF THE AC BREAKDOWN OF THE QUANTUM HALL-EFFECT
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[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (13): : L331 - L336
[10] CURRENT CONTACTS AND THE BREAKDOWN OF THE QUANTUM HALL-EFFECT
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[J]. PHYSICAL REVIEW B, 1990, 42 (17): : 11267 - 11273

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