MASK DEPENDENT ETCH RATES .2. THE EFFECT OF ALUMINUM VS PHOTORESIST MASKING ON THE ETCH RATES OF SILICON AND SILICON DIOXIDE IN FLUORINE CONTAINING PLASMAS

被引：21

作者：

FEDYNYSHYN, TH ^{[1
]}

GRYNKEWICH, GW ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 10期

关键词：

ALUMINUM TRIFLUORIDE - FLUORINE CONTAINING PLASMAS - MASK DEPENDENT ETCH RATES - PHOTORESIST MASKING;

D O I：

10.1149/1.2100246

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

(Edited Abstract)

引用

页码：2580 / 2585

页数：6

共 14 条

[1] MASK DEPENDENT ETCH RATES .3. THE EFFECT OF A SILVER ETCH MASK ON THE PLASMA ETCH RATE OF SILICON
FEDYNYSHYN, TH
GRYNKEWICH, GW
DUMAS, RH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) : 268 - 269
[2] THE EFFECT OF ALUMINUM VS PHOTORESIST MASKING ON THE ETCHING RATES OF SILICON AND SILICON DIOXIDE IN CF4/O2 PLASMAS
FEDYNYSHYN, TH
GRYNKEWICH, GW
HOOK, TB
LIU, MD
MA, TP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (01) : 206 - 209
[3] EFFECT OF ALUMINUM vs. PHOTORESIST MASKING ON THE ETCHING RATES OF SILICON AND SILICON DIOXIDE IN CF4/O2 PLASMAS.
Fedynyshyn, Theodore H.
Grynkewich, Gregory W.
Hook, Terence B.
Liu, Ming-Deng
Ma, Tso-Ping
1600, (134):
[4] THE EFFECT OF ALUMINUM MASKS ON THE PLASMA ETCH RATES OF POLYSILICON AND SILICON-NITRIDE
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FEDYNYSHYN, TH
DUMAS, RH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (01): : 5 - 9
[5] COMPARISON OF ETCH RATES OF SILICON-NITRIDE, SILICON DIOXIDE, AND POLYCRYSTALLINE SILICON UPON O-2 DILUTION OF CF4 PLASMAS
RILEY, PE
HANSON, DA
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1352 - 1356
[6] THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS
DANNER, DA
HESS, DW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) : 151 - 155
[7] REACTIVE SPUTTER ETCHING OF SILICON WITH VERY LOW MASK-MATERIAL ETCH RATES
HORWITZ, CM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (11) : 1320 - 1323
[8] Orientation-dependent plasma etch rates of single crystal silicon for dry etcher parts
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Lee, KyuMann
INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2015, 106 (11) : 1123 - 1130
[9] Effect of alcohols on the face-specific etch rates of silicon: Alcohol molecular structure controls etchant anisotropy
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ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2011, 241
[10] Plasma-enhanced chemical vapour-deposited silicon nitride films; The effect of annealing on optical properties and etch rates
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