1.55 MU-M HIGH-GAIN POLARIZATION-INSENSITIVE SEMICONDUCTOR TRAVELING-WAVE AMPLIFIER WITH LOW DRIVING CURRENT

被引：20
|
作者：
MERSALI, B
GELLY, G
ACCARD, A
LAFRAGETTE, JL
DOUSSIERE, P
LAMBERT, M
FERNIER, B
机构：
[1] Laboratoires de Marcoussis, 91460 Marcoussis, Route de Nozay
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 02期
关键词：
Epitaxy; Optical communications; Semiconductor lasers;
D O I：
10.1049/el:19900085
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Polarisation-insensitive GaInAsP/InP semiconductor amplifiers have been fabricated from gas source molecular beam epitaxy (GSMBE) and BH laser with multilayer coatings. The TE and TM gains are equal to within 1 dB and an average internal gain of 28 dB is obtained at only 50 mA forward current. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：124 / 125
页数：2
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