A SUBTHRESHOLD CONDUCTION MODEL FOR CIRCUIT SIMULATION OF SUBMICRON MOSFET

被引：8
|
作者：
CHAN, PC [1 ]
LIU, R [1 ]
LAU, SK [1 ]
PINTOGUEDES, M [1 ]
机构：
[1] HEWLETT PACKARD CO,DIV INTEGRATED CIRCUITS,CUPERTINO,CA 95014
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1987年 / 6卷 / 04期
关键词：
D O I：
10.1109/TCAD.1987.1270304
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页码：574 / 581
页数：8
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