SMALL-SIZED COLLECTOR-UP GE/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-GAIN, LOW BASE RESISTANCE, AND HIGH FMAX

被引：2

作者：

KAWANAKA, M

IGUCHI, N

FURUKAWA, A

SONE, J

机构：

[1] Fundamental Research Laboratories, MEC Corporation, Tsukuba Ibaraki

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 02期

关键词：

D O I：

10.1109/55.285375

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Small-sized collector-up Ge/GaAs HBT's are successfully fabricated and their operation at a high collector current density and at a high frequency is realized for the first time. The current gain of these devices reaches a peak value as large as 200 at a current density 6 x 10(4) Acm-2, and no degradation in the current gain is observed as the collector width is decreased down to 2 mum. The capability of lower voltage operation is also shown. Intrinsic and extrinsic base resistances are as low as 180 OMEGA/Square and 90 OMEGA/Square, respectively. The calibrated values of f(T) and f(max) are 25 GHz and 60 GHz, respectively. The larger value of f(max) compared with f(T) might be attributed to low base resistance and low base-collector capacitance as expected from the collector-up structure.

引用

页码：54 / 56

页数：3

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