THE ADMITTANCE OF A DIODE WITH A RETARDING FIELD

被引：1

作者：

FREEMAN, JJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1952年 / 23卷 / 07期

关键词：

D O I：

10.1063/1.1702294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：743 / 745

页数：3

共 50 条

[1] HIGH-FREQUENCY DIODE ADMITTANCE WITH RETARDING DIRECT-CURRENT FIELD
KNOL, KS
DIEMER, G
[J]. PHILIPS RESEARCH REPORTS, 1952, 7 (04): : 251 - 258
[2] NOISE SPECTRUM OF A DIODE WITH A RETARDING FIELD
FREEMAN, JJ
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (01): : 75 - 88
[3] MICROWAVE BARITT DIODE WITH RETARDING-FIELD - INVESTIGATION
EKNOYAN, O
SZE, SM
YANG, ES
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (04) : 285 - 289
[4] CHARGE RATIO DURING SWITCHING OF A DIODE WITH A RETARDING FIELD IN BASE
MOKEYEV, OK
[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (09): : 1400 - &
[5] ADMITTANCE OF TRAP DIELECTRIC DIODE TAKING INTO ACCOUNT STRONG FIELD EFFECTS
GILDENBLAT, GS
KARACHENTSEV, AY
POTASHEV, YN
[J]. RADIOTEKHNIKA I ELEKTRONIKA, 1978, 23 (07): : 1510 - 1513
[6] SWITCHING A SEMICONDUCTOR DIODE WITH A RETARDING FIELD IN BASE BY MEANS OF SHORT FORWARD CURRENT PULSES
MOKEYEV, OK
[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (09): : 1390 - +
[7] NOMOGRAMS FOR DETERMINING ADMITTANCE OF A TUNNEL DIODE
MARK, II
ZAKHAROV, VI
FELDMAN, LE
[J]. TELECOMMUNICATIONS AND RADIO ENGINEER-USSR, 1969, (08): : 142 - &
[8] RETARDING-FIELD OSCILLATORS
EBERS, JJ
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (02): : 138 - 145
[9] ON THE RETARDING FIELD CURRENT IN DIODES
FURTH, R
MACDONALD, DKC
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1950, 63 (364): : 300 - 302
[10] UTILIZATION OF RETARDING FIELD TRANSISTORS
UZUNOGLU, V
WHITE, MH
[J]. PROCEEDINGS OF THE IEEE, 1963, 51 (03) : 495 - &

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