共 50 条
- [2] ELECTRON COMBINATION RESONANCE INTENSITY IN SEMICONDUCTORS WITH A NARROW FORBIDDEN BAND [J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (10): : 2470 - +
- [3] DEPENDENCE OF MOBILITY IN NARROW-GAP SEMICONDUCTORS ON FORBIDDEN-BAND WIDTH [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 619 - 619
- [4] MAGNETIC SUSCEPTIBILITY OF SEMIMETALS AND NARROW-GAP SEMICONDUCTORS [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 315 - &
- [5] ELECTRON-ELECTRON INTERACTION EFFECT ON FORBIDDEN BAND-GAP IN NONDEGENERATE NARROW-BAND SEMICONDUCTORS [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (06): : 113 - 118
- [7] LOCAL STATES IN A SEMICONDUCTOR WITH A NARROW FORBIDDEN BAND [J]. SOVIET PHYSICS JETP-USSR, 1967, 24 (05): : 975 - &
- [8] QUADRATIC NONLINEARITY OF SEMICONDUCTORS WITH ZERO FORBIDDEN BAND [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (04): : 381 - 383
- [10] BAND MIXING IN NARROW GAP SEMICONDUCTORS [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1984, 54 (03): : 191 - 194