MULTIWAFER GROWTH OF ALGAAS GAAS HETEROSTRUCTURES BY MOCVD FOR HEMT LSI

被引：0
|
作者：
KOMENO, J [1 ]
TANAKA, H [1 ]
ITOH, H [1 ]
OHORI, T [1 ]
TAKIKAWA, M [1 ]
KASAI, K [1 ]
机构：
[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1987年 / 16卷 / 04期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：A9 / A9
页数：1
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