GROWTH AND CHARACTERIZATION OF THE HG1-XCDXTE PHOTOCHEMICAL NATIVE OXIDE

被引：0
|
作者：
KAO, TM [1 ]
SIGMON, TW [1 ]
机构：
[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C431 / C431
页数：1
相关论文
共 50 条
  • [1] GROWTH AND CHARACTERIZATION OF HG1-XCDXTE PHOTOCHEMICAL NATIVE OXIDES
    KAO, TM
    SIGMON, TW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) : 3076 - 3081
  • [2] Thermal stability of photochemical native oxide films on Hg1-xCdxTe
    Winton, GH
    Warrington, N
    Faraone, L
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04): : 2325 - 2330
  • [3] PROPERTIES OF HG1-XCDXTE NATIVE OXIDE INTERFACES
    HELMS, CR
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 1178 - 1181
  • [4] PASSIVATION OF HG1-XCDXTE BY PHOTOCHEMICAL NATIVE OXIDATION - QUANTITATIVE-ANALYSIS OF OXIDE COMPOSITION
    WINTON, GH
    FARAONE, L
    WARRINGTON, N
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (08) : 1029 - 1037
  • [5] INTERFACE BETWEEN HG1-XCDXTE AND ITS NATIVE OXIDE
    NEMIROVSKY, Y
    KIDRON, I
    [J]. SOLID-STATE ELECTRONICS, 1979, 22 (10) : 831 - 837
  • [6] GROWTH BY CVT AND CHARACTERIZATION OF HG1-XCDXTE LAYERS
    WIEDEMEIER, H
    UZPURVIS, AE
    WANG, D
    [J]. JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 474 - 478
  • [7] Growth and physics of Hg1-xCdxTe and type IIIHgTe/Hg1-xCdxTe heterostructures
    Becker, CR
    Zhang, XC
    Ortner, K
    Schmidt, J
    Pfeuffer-Jeschke, A
    Latussek, V
    Landwehr, G
    [J]. PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 61 - 64
  • [8] Epitaxial growth of Hg1-xCdxTe
    Duric, ZG
    Jovic, VB
    [J]. ADVANCED MATERIALS FOR HIGH TECHNOLOGY APPLICATIONS, 1996, 214 : 57 - 64
  • [9] GROWTH BY CVT AND CHARACTERIZATION OF HG1-XCDXTE EPITAXIAL LAYERS
    WIEDEMEIER, H
    SHA, YG
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (06) : 563 - 573
  • [10] NATIVE OXIDE ENCAPSULATION FOR ANNEALING BORON-IMPLANTED HG1-XCDXTE
    KAO, TM
    SIGMON, TW
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (08) : 464 - 466
12345