SCANNING ELECTRON ACOUSTIC MICROSCOPY OF INDIUM-DOPED SEMIINSULATING GAAS

被引：4
|
作者：
MENDEZ, B
PIQUERAS, J
机构：
[1] Dept. de Fisica de Mater., Univ. Complutense, Madrid
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 03期
关键词：
D O I：
10.1088/0268-1242/8/3/002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.
引用
收藏
页码：320 / 321
页数：2
相关论文
共 50 条
  • [1] Transient electron transport in indium-doped semiinsulating GaAs
    Kazukauskas, V
    Storasta, J
    Vaitkus, JV
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 557 - 560
  • [2] CHARACTERIZATION OF SEMIINSULATING GAAS - CR BY SCANNING ELECTRON ACOUSTIC MICROSCOPY
    MENDEZ, B
    PIQUERAS, J
    JOURNAL DE PHYSIQUE IV, 1991, 1 (C6): : 295 - 296
  • [3] APPLICATION OF SCANNING ELECTRON ACOUSTIC MICROSCOPY TO THE CHARACTERIZATION OF N-TYPE AND SEMIINSULATING GAAS
    MENDEZ, B
    PIQUERAS, J
    APPLIED PHYSICS LETTERS, 1992, 60 (11) : 1357 - 1359
  • [4] Faulted dipoles in Indium-doped GaAs
    Yonenaga, I
    Brown, PD
    Burgess, WG
    Humphreys, CJ
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 87 - 90
  • [5] DEEP LEVELS IN INDIUM-DOPED GAAS
    KAMINSKI, P
    NIZINKI, Z
    MATERNA, A
    ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 331 - 333
  • [6] PHOTOCONDUCTIVE SCANNING TUNNELING MICROSCOPY ON SEMIINSULATING GAAS
    VANDEWALLE, GFA
    VANKEMPEN, H
    WYDER, P
    DAVIDSSON, P
    SURFACE SCIENCE, 1987, 181 (1-2) : 356 - 361
  • [7] SCANNING TUNNELING MICROSCOPY ON PHOTOCONDUCTIVE SEMIINSULATING GAAS
    VANDEWALLE, GFA
    VANKEMPEN, H
    WYDER, P
    DAVIDSSON, P
    APPLIED PHYSICS LETTERS, 1987, 50 (01) : 22 - 24
  • [8] INDIUM-DOPED GAAS - INVESTIGATION OF DEEP TRAPS
    LAURENTI, JP
    WOLTER, K
    ROENTGEN, P
    SEIBERT, K
    KURZ, H
    CAMASSEL, J
    PHYSICAL REVIEW B, 1989, 39 (09): : 5934 - 5946
  • [9] INDIUM-DOPED GAAS - A VERY DILUTE ALLOY SYSTEM
    LAURENTI, JP
    ROENTGEN, P
    WOLTER, K
    SEIBERT, K
    KURZ, H
    PHYSICAL REVIEW B, 1988, 37 (08): : 4155 - 4163
  • [10] Study of overgrowth heterostructure InSb GaAs by scanning electron acoustic microscopy
    Li, SW
    Kubalek, E
    Jin, YX
    Jiang, FM
    Yin, QR
    JOURNAL OF MATERIALS SCIENCE, 1999, 34 (11) : 2561 - 2564
12345