DEEP-LEVEL CHARACTERIZATION OF ALXIN1-XAS LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：2
|
作者：
BEARZI, E
DUCROQUET, F
GUILLOT, G
TARDY, J
CANEAU, C
CHAN, W
BHAT, R
机构：
[1] BELLCORE,RED BANK,NJ 07701
[2] ECOLE CENT LYON,LEAME,CNRS,URA 848,F-69131 ECULLY,FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期
关键词：
ALINAS; MOCVD; DEEP LEVEL;
D O I：
10.1016/0921-5107(94)90097-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, non-intentionally doped AlxIn1-x As layers lattice matched to InP grown by low pressure metal/organic chemical vapor deposition have been characterized. We show the presence of a deep level located at E(c)-0.62 eV associated with impurity contamination. The contamination appears near the sample surface. We observe the passivation of deep levels and of the Si shallow donor level in this surface zone which leads to conclusion that a hydrogenation effect occurs.
引用
收藏
页码：421 / 424
页数：4
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