ELECTRONIC-PROPERTIES OF THE INSULATING HALF-FILLED HUBBARD-MODEL

被引：103
|
作者：
BULUT, N
SCALAPINO, DJ
WHITE, SR
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106
[3] UNIV CALIF IRVINE,DEPT PHYS,IRVINE,CA 92717
来源：
PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 05期
关键词：
D O I：
10.1103/PhysRevLett.73.748
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Monte Carlo results for the frequency dependent conductivity sigma1(omega), the angular resolved photoemission spectral weight A(p,omega), and the electron momentum distribution [n(p)] are calculated for a half-filled Hubbard model with the on-site Coulomb interaction U equal to the bandwidth 8t. We find that even for U = 8t, a spin-density-wave approximation provides a sensible description of this data and hence a useful picture of the electronic degrees of freedom in the insulating state.
引用
收藏
页码：748 / 751
页数：4
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