Study Of GaAs MMIC Power Amplifier For Integrated Circuit Applications

被引：0
|
作者：
Yarn, K. F. [1 ]
Wu, K. K. [1 ]
Chang, T. R. [2 ]
机构：
[1] Far East Coll, Dept Elect Engn, Tainan 744, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 701, Taiwan
来源：
JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES | 2005年 / 1卷 / 02期
关键词：
MMIC; CAD; MESFET; noise figure; stability; Smith chart;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
GaAs-based low noise amplifier operating at 2GHz frequency band has been designed for microwave application by using monolithic microwave integrated circuit (MMIC) technology. Making use of computer aided design (CAD) techniques, i.e., HP-MDS software and considering the layout rules as well as the design rules of the MMIC, the design circuit of a broadband power amplifier has been achieved. The designed single-ended one-stage MESFET amplifier exhibits a 3.07dB noise figure and 8.08dB power gain with a 3dB bandwidth of 600MHz centered at 2GHz.
引用
收藏
页码：171 / 176
页数：6
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