2-DIMENSIONAL AVALANCHE SIMULATION OF COLLECTOR EMITTER BREAKDOWN

被引：4
|
作者：
ARNBORG, T
机构：
[1] Texas Instruments, Inc., Dallas
[2] Ericsson Components AB
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 09期
关键词：
D O I：
10.1109/16.57175
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new two-dimensional (2D) transient simulation with the avalanche effect included has been used to study breakdown phenomena in conventional vertical bipolar transistors of n-p-n type. The simulated current responses to voltage ramps show the important difference in speed for the emitter-collector breakdown and collector-base breakdown. DC specified values may be considered too conservative. © 1990 IEEE
引用
收藏
页码：2099 / 2101
页数：3
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