PLASMA-ETCHING OF ALPHA-SIALON CERAMICS

被引：17
|
作者：
MITOMO, M
SATO, Y
AYUZAWA, N
YASHIMA, I
机构：
[1] SHINAGAWA REFRACTORIES CO,NEW MAT RES CTR,BIZEN,OKAYAMA 705,JAPAN
[2] MITSUI MIN CO,CTR CENT RES & DEV,KOUMACHI,TOCHIGI 328,JAPAN
来源：
JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1991年 / 74卷 / 04期
关键词：
PLASMA; ETCHING; SIALON; SILICON NITRIDE; MICROSTRUCTURE;
D O I：
10.1111/j.1151-2916.1991.tb06940.x
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Plasma etching of beta-Si3N4, alpha-sialon/beta-Si3N4 and alpha-sialon ceramics were performed with hydrogen glow plasma at 600-degrees-C for 10 h. The preferential etching of beta-Si3N4 grains was observed. The etching rate of alpha-sialon grains and of the grain-boundary glassy phase was distinctly lower than that of beta-Si3N4 grains. The size, shape, and distribution of beta-Si3N4 grains in the alpha-sialon/beta-Si3N4 composite ceramics were revealed by the present method.
引用
收藏
页码：856 / 858
页数：3
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