AN ELECTRON-SPIN-RESONANCE STUDY OF GAMMA-IRRADIATED BARIUM GALLIOSILICATE GLASSES

被引：1
|
作者：
DUTT, DA [1 ]
GRISCOM, DL [1 ]
SHAW, CM [1 ]
SHELBY, JE [1 ]
机构：
[1] ALFRED UNIV,NEW YORK STATE COLL CERAM,GLASS SCI LAB,ALFRED,NY 14802
来源：
JOURNAL OF CHEMICAL PHYSICS | 1992年 / 96卷 / 07期
关键词：
D O I：
10.1063/1.462775
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Electron-spin-resonance spectroscopy has been used to study the structure of radiation-induced defects in a barium galliosilicate glass compositional series of BaO/Ga2O3 = 1.0 and 20-80 mol % SiO2. Spin-Hamiltonian parameters derived from computer line-shape simulations have been used to identify three oxygen-associated hole centers: a gallium-oxygen hole center and two variations of silicon-oxygen hole centers. Each of these defects contains an unpaired electron in a nonbonding oxygen p orbital. The compositional dependence of the ESR data is consistent with a gradual change from a Ga-based tetrahedral network to a Si-based tetrahedral network as the silica content is increased.
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收藏
页码：4852 / 4859
页数：8
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