REDISTRIBUTION OF CHROMIUM UPON POST-IMPLANT ANNEALING OF SELENIUM-IMPLANTED GAAS

被引：0
|
作者：
EVANS, CA
DELINE, VR
SIGMON, TW
LIDOW, A
机构：
[1] CHARLES EVANS & ASSOCIATES,SAN MATEO,CA 94402
[2] STANFORD UNIV,STAND ELECTR LAB,STANFORD,CA 94305
[3] INT RECTIFIER CORP,EL SEGUNDO,CA 90245
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1979年 / 26卷 / 11期
关键词：
D O I：
10.1109/T-ED.1979.19773
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1853 / 1853
页数：1
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