ELECTRONIC-PROPERTIES OF DISLOCATION SEGMENTS IN PLASTICALLY DEFORMED SILICON

被引：0
|
作者：
OSSIPYAN, YA
KVEDER, VV
STEINMAN, EA
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Presented are the experimental data on photoluminescence and electrodipole resonance in plastically deformed Si and Ge, yielding information about the electronic properties of straight dislocation segments.
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页码：211 / 216
页数：6
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