LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS

被引：103

|

作者：

GAT, A

GIBBONS, JF

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 03期

关键词：

D O I：

10.1063/1.89960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：142 / 144

页数：3

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