THERMAL-STABILITY OF SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES GROWN BY LIMITED REACTION PROCESSING

被引：27
|
作者：
NOBLE, DB [1 ]
HOYT, JL [1 ]
GIBBONS, JF [1 ]
SCOTT, MP [1 ]
LADERMAN, SS [1 ]
ROSNER, SJ [1 ]
KAMINS, TI [1 ]
机构：
[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304
来源：
APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 19期
关键词：
D O I：
10.1063/1.102138
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1978 / 1980
页数：3
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