ELECTRICAL PROPERTIES OF CARBON-DOPED GALLIUM-PHOSPHIDE

被引：16

|

作者：

BORTFELD, DP

CURTIS, BJ

MEIER, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 03期

关键词：

D O I：

10.1063/1.1661261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1293 / &

相关论文

共 50 条

[1] ELECTRICAL-PROPERTIES OF MANGANESE-DOPED GALLIUM-PHOSPHIDE
EVWARAYE, AO
WOODBURY, HH
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) : 1595 - 1598
[2] ELECTRICAL PROPERTIES OF A NATIVE OXIDE ON GALLIUM-PHOSPHIDE
SPITZER, SM
SCHWARTZ, B
KUHN, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (05) : 669 - 672
[3] ELECTRICAL-PROPERTIES OF DONORS IN GALLIUM-PHOSPHIDE
PODOR, B
PFEIFER, J
CSONTOS, L
NADOR, N
DEAK, F
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1983, 76 (02): : 695 - 704
[4] ELECTRICAL PROPERTIES OF A NATIVE OXIDE SURFACE FILM ON GALLIUM-PHOSPHIDE
SPITZER, SM
SCHWARTZ, B
KUHN, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : C242 - &
[5] ELECTRICAL PROPERTIES AND LUMINESCENCE OF ALLOYS OF GALLIUM-PHOSPHIDE AND ZINC SELENIDE
YU, PW
GLICKSMA.M
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4153 - &
[6] ELECTRICAL AND OPTICAL PROPERTIES OF PROTON-BOMBARDED GALLIUM-PHOSPHIDE
SPITZER, SM
NORTH, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 214 - 219
[7] LUMINESCENCE OF DYSPROSIUM-DOPED GALLIUM-PHOSPHIDE
KASATKIN, VA
KESAMANLY, FP
SAMORUKOV, BE
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 974 - 975
[8] ON THE GROWTH OF GALLIUM-PHOSPHIDE LAYERS ON GALLIUM-PHOSPHIDE SUBSTRATES BY MOVPE
LEYS, MR
PISTOL, ME
TITZE, H
SAMUELSON, L
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (01) : 25 - 31
[9] NUCLEAR-RELAXATION IN DOPED GALLIUM-PHOSPHIDE
TUNSTALL, DP
ROGERSON, A
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (15): : 3105 - 3120
[10] LUMINESCENCE OF GE-DOPED GALLIUM-PHOSPHIDE
SAMORUKOV, BE
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1974, (03): : 138 - 140

← 1 2 3 4 5 →