PROGRESS IN GALLIUM-ARSENIDE SEMICONDUCTORS

被引：14
|
作者：
BRODSKY, MH
机构：
来源：
SCIENTIFIC AMERICAN | 1990年 / 262卷 / 02期
关键词：
D O I：
10.1038/scientificamerican0290-68
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：68 / 75
页数：8
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