MICROSTRUCTURE DEVELOPMENT OF THE SINGLE-STEP, LOW-TEMPERATURE SINTERED SRTIO3 GBBL CAPACITOR MATERIALS

被引：2
|
作者：
XU, BM [1 ]
YIN, ZW [1 ]
WANG, H [1 ]
机构：
[1] SHANGHAI UNIV SCI & TECHNOL,SHANGHAI 201800,PEOPLES R CHINA
来源：
FERROELECTRICS LETTERS SECTION | 1993年 / 16卷 / 5-6期
关键词：
D O I：
10.1080/07315179308203360
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The microstructure development of the single-step, low-temperature sintered SrTiO3 GBBL capacitor materials is studied according to the microstructure analysis, mass transfer and defect chemical reactions during sintering process. The sintering mechanism is the reactive liquid phase sintering with the participation of solid state diffusion caused by the volatilization of oxygen. Insulating grain boundaries are formed by the grain boundary segregation of Li2O, which is caused by the donor enhanced volatilization of oxygen. Grains are semiconductorized during grain growth process which incorporates the donor dopant into SrTiO3 lattice.
引用
收藏
页码：157 / 165
页数：9
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