共 50 条
- [1] INFLUENCE OF A MAGNETIC-FIELD ON SPONTANEOUS AND STIMULATED EMISSION FROM P-N-JUNCTIONS IN PBSE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1127 - 1129
- [2] MICROWAVE OSCILLATION IN INAS P-N-JUNCTIONS APPLIED PHYSICS LETTERS, 1992, 61 (25) : 2999 - 3001
- [3] SHIFT OF SPECTRAL PHOTOSENSITIVITY OF P-N JUNCTIONS IN INAS IN AN ELECTRIC FIELD SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 1031 - +
- [4] DIFFUSION P-N-JUNCTIONS MADE OF P-INAS RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (06): : 952 - &
- [5] PRODUCT R0A FOR P-N-JUNCTIONS IN INAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (10): : 1014 - 1017
- [6] PHOTOSENSITIVITY OF MULTILAYER STRUCTURES WITH VERY LARGE NUMBERS OF P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (02): : 247 - 249
- [7] INVESTIGATIONS OF KINETICS OF PHOTO-EMF OF INAS P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 712 - +
- [8] AVALANCHE MULTIPLICATION IN P-N-JUNCTIONS IN INAS1-XSBX SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (03): : 294 - 297
- [9] CARRIER MULTIPLICATION IN INAS AND INGAAS P-N-JUNCTIONS AND THEIR IONIZATION COEFFICIENTS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (05): : 509 - 513
- [10] INFLUENCE OF A STRONG MICROWAVE FIELD ON THE PHOTOELECTRIC CHARACTERISTICS OF SILICON P-N-JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (06): : 583 - 587