DIFFERENT RESPONSE OF ATOMIC FORCE MICROSCOPY AND SCANNING TUNNELING MICROSCOPY TO CHARGE-DENSITY WAVES

被引：17

作者：

MEYER, E ^{[1
]}

WIESENDANGER, R ^{[1
]}

ANSELMETTI, D ^{[1
]}

HIDBER, HR ^{[1
]}

GUNTHERODT, HJ ^{[1
]}

LEVY, F ^{[1
]}

BERGER, H ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,PHB ECUBLENS,INST APPL PHYS,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1116/1.576372

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the transition metal dichalcogenides lT-TaS and lT-TaSe exhibiting charge density waves (CDW) at room temperature by scanning tunneling microscopy (STM) and atomic force microscopy (AFM) with atomic resolution. STM images are dominated by the charge density wave modulation, while the AFM operated with an applied loading in the range of 10~N responds only to the atomic surface structure. Several possible explanations for this experimental result are discussed, including differences in what STM and AFM are sensitive to, as well as a possible local pressure dependence of the CDW state. © 1990, American Vacuum Society. All rights reserved.

引用

页码：495 / 499

页数：5

共 50 条

[1] DIFFERENT RESPONSE OF ATOMIC FORCE MICROSCOPY AND SCANNING TUNNELLING MICROSCOPY TO CHARGE-DENSITY WAVES
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