PROPERTIES OF WNX FILMS AND WNX/GAAS SCHOTTKY DIODES PREPARED BY ION-BEAM ASSISTED DEPOSITION TECHNIQUE

被引：0
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作者：
LEE, JS
PARK, CS
KANG, JY
MA, DS
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来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1990年 / 106期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：581 / 585
页数：5
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