RESEARCH LEADING TO POINT-CONTACT TRANSISTOR

被引：12

作者：

BARDEEN, J

机构：

来源：

SCIENCE | 1957年 / 126卷 / 3264期

关键词：

D O I：

10.1126/science.126.3264.105

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：105 / 113

页数：9

共 50 条

[1] BARDEEN,JOHN AND THE POINT-CONTACT TRANSISTOR
HOLONYAK, N
PHYSICS TODAY, 1992, 45 (04) : 36 - 43
[2] FREQUENCY STABILITY OF POINT-CONTACT TRANSISTOR OSCILLATORS
CHENG, CC
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (02): : 219 - 223
[3] THE EFFECT OF SURFACE TREATMENTS ON POINT-CONTACT TRANSISTOR CHARACTERISTICS
FORSTER, JH
MILLER, LE
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (04): : 767 - 811
[4] The invention of the point-contact transistor: A case study in serendipity
Bray, R
ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 37 - 50
[5] The invention of the point-contact transistor: A case study in serendipity
Bray, R
SILICON MATERIALS SCIENCE AND TECHNOLOGY, VOLS 1 AND 2, 1998, : 143 - 156
[6] Extended point-contact model of the cell-transistor coupling
不详
EUROPEAN BIOPHYSICS JOURNAL WITH BIOPHYSICS LETTERS, 2005, 34 (06): : 653 - 653
[7] A GERMANIUM POINT-CONTACT TRANSISTOR TO OPERATE AT HIGH AMBIENT TEMPERATURES
GIBSON, AF
GRANVILLE, JW
BARDSLEY, W
BRITISH JOURNAL OF APPLIED PHYSICS, 1955, 6 (07): : 251 - 254
[8] NEGATIVE RESISTANCE REGIONS IN THE COLLECTOR CHARACTERISTICS OF THE POINT-CONTACT TRANSISTOR
MILLER, LE
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (01): : 65 - 72
[9] POINT-CONTACT SPECTROSCOPY
JANSEN, AGM
ACTA PHYSICA POLONICA A, 1992, 82 (04) : 539 - 550
[10] POINT-CONTACT SPECTROSCOPY
FRANKOWSKI, I
WACHTER, P
HELVETICA PHYSICA ACTA, 1981, 54 (04): : 610 - 610

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