HRTEM OBSERVATIONS OF INHOMOGENEITIES AT THE COSI2/SI(111) INTERFACE

被引：0
|
作者：
RAHMAN, SH [1 ]
BASCHEK, G [1 ]
MEISER, S [1 ]
ADAMSKI, C [1 ]
机构：
[1] UNIV HANOVER, INST HALBLEITERTECHNOL & WERKSTOFFE ELEKTROTECH, W-3000 HANNOVER, GERMANY
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1988年 / 93期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Thin epitaxial cobaltsilicide films have been grown in ultrahigh vacuum on Si(111). HRTEM and electron diffraction investigations reveal the coexistence of different silicides at various temperatures within the interface.
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收藏
页码：109 / 110
页数：2
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