ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE

被引：41
|
作者：
ALOK, D
MCLARTY, PK
BALIGA, BJ
机构：
[1] Power Semiconductor Research Center, North Carolina State University, Raleigh
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 17期
关键词：
D O I：
10.1063/1.112753
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties of thermal oxides grown on p-type 6H-silicon carbide were investigated during this work. Thermal oxides were grown on 7x10(15) cm(-3) aluminum doped p-type 6H-silicon carbide at 1275 degrees C in a dry oxygen ambient. Capacitance-voltage measurement indicated the presence of a large positive charge in the oxide. The interface state density and effective charge density for these oxides was estimated to be 1x10(11) cm(-2) eV(-1) and 8X10(12) cm(-2) respectively. Bias temperature stress measurement showed the presence of negative bias stress instability and slow trapping. (C) 1994 American Institute of Physics.
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收藏
页码：2177 / 2178
页数：2
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