A MIXED METHOD FOR THE MIXED INITIAL-BOUNDARY VALUE-PROBLEMS OF EQUATIONS OF SEMICONDUCTOR-DEVICES

被引：8

作者：

ZHU, J ^{[1
]}

WU, HW ^{[1
]}

WANG, YM ^{[1
]}

机构：

[1] SOUTHEAST UNIV, DEPT MATH & MECH, NANJING 210018, PEOPLES R CHINA

来源：

SIAM JOURNAL ON NUMERICAL ANALYSIS | 1994年 / 31卷 / 03期

关键词：

MIXED METHOD; MIXED INITIAL BOUNDARY VALUE PROBLEM; SEMICONDUCTOR DEVICE EQUATION;

D O I：

10.1137/0731039

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

In this article, the approximation of nonstationary equations of the semiconductors device with mixed boundary conditions is considered. The approximate procedures of this system using a Galerkin method that makes use of a mixed finite element method for the potential equation combined with a finite element method for the concentration equations is presented. Due to the poor regularity properties of the solutions to the semiconductor equations caused by mixed boundary conditions, a nonstandard analysis for the semidiscrete Galerkin procedure is used. Existence and uniqueness of the approximate solution is proved. A convergence analysis is also given for the method.

引用

页码：731 / 744

页数：14

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