INVESTIGATIONS INTO THE THERMAL-DECOMPOSITION OF TRIETHYLARSENIC - THE INFLUENCE OF REAGENT CHEMISTRY ON GAAS EPITAXIAL-GROWTH PURITY

Decomposition of triethylarsenic (Et3As) in hydrogen was monitored as a function of temperature by gas chromatography-mass spectroscopy. The onset of Et3As decomposition occurs at 400°C and is complete at 700°C. The major organic product formed is ethane, with ethylene produced as a minor product. However, a beta-hydrogen elimination pathway does not appear to be the first step in Et3As decomposition. Instead, the pyrolysis data is consistent with an initial bond homolysis step that subsequently triggers a chain of radical-mediated pathways. The relationship between the proposed chemistry of Et3As decomposition and the properties of GaAs films grown from this reagent are also discussed. © 1990, The Electrochemical Society, Inc. All rights reserved.