PHOTOREFLECTANCE STUDY OF INP AND GAAS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING TERTIARYBUTYLPHOSPHINE AND TERTIARYBUTYLARSINE SOURCES

被引：0
|
作者：
KUAN, H
SU, YK
CHANG, SJ
TZOU, WJ
机构：
[1] Department of Electrical Engineering, National Cheng Rung University, Tainau
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4A期
关键词：
MOCVD; TBP; TEA; PHOTOREFLECTANCE (PR);
D O I：
10.1143/JJAP.34.1831
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two metalorganic sources, tertiarybutylphosphine (TBP) and tertiarybutylarsipe (TEA), have been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD) process. The optical properties of epilayers were characterized by photoreflectance (PR) spectra. The V/III ratios were varied at a growth temperature of 600 degrees C and growth pressure of 150 Torr. The broadening parameter Gamma of GaAs at 300 K PR was 11.35 meV. The room-temperature Gamma value of InP PR measurement was about 11.46 meV.
引用
收藏
页码：1831 / 1832
页数：2
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