10 GBIT/S LOW CHIRP PERFORMANCE OF STRAINED LAYER MULTIQUANTUM WELL DFB LASER

被引:15
|
作者
HIRAYAMA, Y
MORINAGA, M
TANIMURA, M
ONOMURA, M
FUNEMIZU, M
KUSHIBE, M
SUZUKI, N
NAKAMURA, M
机构
[1] Toshiba Corporation, Research and Development Center, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho
关键词
SEMICONDUCTOR LASERS; LASERS;
D O I
10.1049/el:19910156
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A large improvement in the high speed characteristic of strained layer multiquantum well (MQW) DFB lasers with a selfaligned constricted mesa structure is described. A very low chirp of 4.2 angstrom at 10 Gbit/s was obtained due to an increased differential gain as large as 4.6 x 10(-12) m3/s and a reduced alpha parameter less than 2.
引用
收藏
页码:241 / 243
页数:3
相关论文
共 50 条