NOVEL W-BAND MONOLITHIC PUSH-PULL POWER-AMPLIFIERS

Monolithic W-band push-pull power amplifiers have been developed using 0.1-mu m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power HEMT technology. The novel design approach utilizes a push-pull topology to take advantage of a virtual ground between the device pair, eliminating the series feedback of the via hole inductance, and thus improving the performance of power amplifier at millimeter-wave frequencies, For a two stage design presented in this paper, the measurement results show that a small signal gain of 13 dB, a saturated output power of 19.4 dBm at 90 GHz. The best power added efficiency of 13.3% has been achieved at an output power of 18.8 dBm under a lower bias condition. The gain and efficiency results represent state-of-the-art performance. These are the first reported monolithic push-pull amplifiers at millimeter-wave frequencies.