REACTIVE ION ETCHING OF SYNTHETIC MONOCRYSTALLINE DIAMOND SURFACE IN PLASMA

被引：0
|
作者：
Bormashov, V. S. [1 ]
Volkov, A. P. [1 ]
Golovanov, A. V. [1 ]
Tarelkin, S. A. [1 ]
Buga, S. G. [1 ]
Blank, V. D. [1 ]
机构：
[1] Technol Inst Superhard & New Carbon Mat, Troitsk, Russia
来源：
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA | 2012年 / 55卷 / 06期
关键词：
reactive ion etching; synthetic diamond; post mechanical polishing; atomic force microscopy;
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The effect of reactive ion etching on synthetic HPHT mono crystalline diamond using Ar/O-2 plasma was studied. The plasma treatment was shown can to result in the smoothing diamond surface. The reduction of root-mean-squared roughness from 4.6 to 3.7 nm for a 10 mu m x 10 mu m scanned area was achieved. The surface topography and profiles were characterized by atomic force microscopy (AFM) at different spatial scales.
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页码：71 / +
页数：4
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