A CHARGE-BASED LARGE-SIGNAL BIPOLAR-TRANSISTOR MODEL FOR DEVICE AND CIRCUIT SIMULATION

被引：22

|

作者：

JEONG, HG

FOSSUM, JG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 01期

关键词：

D O I：

10.1109/16.21191

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：124 / 131

页数：8

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